Характеристики
IGBT MODULE, 2X1200V; Transistor Type:Dual Trench IGBT; Current, Ic Continuous a Max:480A; Voltage, Vce Sat Max:2.15V; Case Style:SEMiX 3s; Current, Ic av:480A; Current, Icm Pulsed:600A; Current, Ifs Max:2000A; Time, Rise:55ns; Voltage, Vceo:1.2V; Voltage, Vrrm:1200V